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  • 专利标题:   FET, has source/drain contact electrode and graphene trench region formed on insulating medium layer, where source contact and drain contact electrodes are respectively connected with graphene trench region.
  • 专利号:   CN102479820-A
  • 发明人:   LIU X, LIU M, HAN M, JI Z, WANG H, SHANG L
  • 专利权人:   INST MICROELECTRONICS CHINESE ACAD SCI
  • 国际专利分类:   H01L021/336, H01L029/12, H01L029/78
  • 专利详细信息:   CN102479820-A 30 May 2012 H01L-029/78 201243 Pages: 8 Chinese
  • 申请详细信息:   CN102479820-A CN10573810 30 Nov 2010
  • 优先权号:   CN10573810

▎ 摘　　要

NOVELTY - The FET has a substrate connected with two sides of a back gate material and an insulating medium layer. A source/drain contact electrode and a graphene trench region are formed on the insulating medium layer. The source contact and the drain contact electrodes are respectively connected with the graphene trench region. The graphene trench region is provided with thickness of monolayer graphite. Thickness of a graphene material is 0.8-1.2nm. The substrate is provided with an n-type or p-type silicon sheet. A silicon dioxide layer is utilized as the insulating medium layer. USE - FET. ADVANTAGE - The graphene material has better carrier mobility. The graphene trench region improves speed of the FET. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for manufacturing a FET. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a FET.