• 专利标题:   Heterojunction with intrinsic thin layer (HIT) solar energy battery assembly has first composite intrinsic semiconductor layer that is deposited to form graphene layer in he composite layer.
  • 专利号:   CN104576800-A, CN104576800-B
  • 发明人:   FANG J, HE D, HUANG Y, QIN C, SHI Q
  • 专利权人:   GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY, GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY
  • 国际专利分类:   H01L031/0224, H01L031/0747, H01L031/18
  • 专利详细信息:   CN104576800-A 29 Apr 2015 H01L-031/0747 201554 Pages: 12 Chinese
  • 申请详细信息:   CN104576800-A CN10671481 21 Nov 2014
  • 优先权号:   CN10671481

▎ 摘  要

NOVELTY - The assembly has a composite electrode (1) that is provided with a composite frontage TCO transparent electric conduction thin film printed on first composite transparent conducting oxide (TCO) transparent electric conduction film. A composite P type doped layer (2) is deposited on P type doped layer of a graphene layer. A first composite intrinsic semiconductor layer (3,5) is deposited to form a graphene layer in composite layer. A composite back electrode (7) is provided with a conduction thin film. The transparent electric conduction thin film is provided to form the graphene layer. USE - Heterojunction with intrinsic thin layer (HIT) solar energy battery assembly. ADVANTAGE - The degree of processing speed is increased and simple process of battery is achieved. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic diagram of HIT solar energy battery assembly. Composite electrode (1) Composite P type doped layer (2) First composite intrinsic semiconductor layer (3,5) N type silicon (4) Composite back electrode (7)