▎ 摘　　要

NOVELTY - Seedless method for forming a semiconductor graphene hybrid, comprises: forming a graphene sheet on a support to form a supported graphene sheet having a graphene face; and exposing the supported graphene sheet to a solution comprising a semiconductor metal ion at a temperature below 100degree C for a time so that the semiconductor grows on the graphene sheet, where the exposing occurs without seeding the graphene sheet. USE - The seedless method is useful for forming a semiconductor graphene hybrid (claimed), which is useful in optoelectronic applications including photovoltaics, photodetection and photocatalysis. ADVANTAGE - The method: does not require a step of seeding the graphene sheet; and provides the semiconductor-graphene hybrid having an electrical conductivity that is substantially the same as the graphene sheet alone (all claimed), high mobility (and hence has high electrical conductivity of charge carriers), extremely thin electrode (graphene may be one layer of carbon atoms) and flexibility (if the graphene is supported by flexible support) in a low-cost and robust scheme for large-scale fabrication of semiconductor nanostructures on graphene. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for the semiconductor-graphene hybrid prepared by the method. DESCRIPTION OF DRAWING(S) - The drawing shows the overview of seedless