▎ 摘　　要

NOVELTY - The heterojunction medium and long wave infrared detector comprises a silicon substrate, tungsten disulfide-graphene quantum dot heterojunction and gold electrode. The silicon substrate grows tungsten disulfide-graphene quantum dot heterojunction. The gold electrode is set on the tungsten disulfide-graphene quantum dot heterojunction. The thickness of the graphene quantum dot heterojunction is 1.2microns. USE - Heterojunction medium and long wave infrared detector for photoconductive device. ADVANTAGE - Photo-generated carriers in the material can realize transition when the incident photon energy is greater than the width of the heterojunction forbidden band. The conductivity of the whole material system is increased, so as to realize the response of the device in the mid-long wave infrared wave band. The material preparation technique is simple and is convenient for industrial mass production. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for preparing the heterojunction medium- and long-wave infrared detector. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of heterojunction medium and long wave infrared detector for photoconductive device. (Drawing includes non-English language text).