▎ 摘　　要

NOVELTY - Preparation of LED epitaxial wafer involves arranging graphene layer on substrate and aluminum nitride layer on the graphene layer, stripping aluminum nitride layer from substrate, and arranging LED epitaxial layer on the aluminum layer. USE - Preparation of LED epitaxial wafer. ADVANTAGE - The process converts the two-step film forming method in the existing industry into a one-step method with excellent thermal conductivity and stress release effect of the multilayer graphene, and reduced production time. The stripping of aluminum nitride is simple to fabricate the flexible LED device without affecting the normal illumination of the device.