▎ 摘　　要

NOVELTY - A nanowire and graphene composite material is prepared by providing silicon germanium-on-insulator (SGOI) substrate comprising silicon substrate, oxide layer and silicon germanium (SiGe) layer from bottom to top, etching SiGe layer, forming strip-shaped pre-determined size SiGe array, concentrating germanium, silicon dioxide (Sio2) layer covering germanium or SiGe nanowire, removing covered SiO2 layer, and growing graphene. USE - Method for preparing nanowire and graphene composite material (claimed). ADVANTAGE - The material is uniform and straight, and has high quality, low defect and controllable size. The method is simple and controllable.