▎ 摘　　要

NOVELTY - The device has a semiconductor light emitting unit that comprises a first conductivity type semiconductor layer, a second conductive semiconductor layer, and active layers. A heat-release structure including a metal nano pattern layer and a graphene layer is contacted with the light emitting unit, where the nano pattern layer and the graphene layer comprise streak patterns and the graphene layer is hydrogen-treated. The graphene layer comprises a mesh structure and a zigzag structure. USE - Semiconductor light emitting device. ADVANTAGE - The device has excellent protection against heat characteristic. The device has simple structure, and can be manufactured with cheap process. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a light emitting device.