• 专利标题:   Method for preparing patterned graphene film, involves soaking substrate in acetone or photoresist peeling solution to remove photoresist or poly(methyl methacrylate) on graphene film to obtain patterned graphene film.
  • 专利号:   CN102653454-A, WO2013023547-A1, US2013149463-A1
  • 发明人:   DAI T, YAO Q, ZHANG F
  • 专利权人:   BOE TECHNOLOGY GROUP CO LTD
  • 国际专利分类:   C03C017/22, C23C018/16, G03F007/00, C01B031/02, B05D005/00
  • 专利详细信息:   CN102653454-A 05 Sep 2012 C03C-017/22 201317 Pages: 9 Chinese
  • 申请详细信息:   CN102653454-A CN10231196 12 Aug 2011
  • 优先权号:   CN10231196

▎ 摘  要

NOVELTY - The method involves coating the photoresist or poly(methyl methacrylate) (PMMA) on a substrate. The graphene oxide solution is coated on the obtained substrate, for forming a film. The substrate is reduced in the hydrazine vapor, and the graphene oxide is provided into the graphene to obtain the graphene film. The substrate is soaked in the acetone or photoresist peeling solution to remove the photoresist or poly(methyl methacrylate) on the graphene film to obtain the patterned graphene film. The substrate is made of glass, metal, quartz or organic matter film. USE - Method for preparing patterned graphene film. ADVANTAGE - The preparation process of patterned graphene film can be simplified and the preparation cost of graphene film can be reduced. The damage to the substrate can be avoided. The applicability of patterned graphene film can be improved. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating the process for preparing patterned graphene film. (Drawing includes non-English language text)