▎ 摘　　要

NOVELTY - Preparing iron disulfide-zirconium dioxide-reduced graphene oxide-based flexible resistive random access memory comprises (i) dissolving terephthalic acid in N,N-dimethylformamide, stirring at room temperature for 10-15 minutes, then adding ferric chloride into the solution, ultrasonic treating for 5-8 minutes, then dripping absolute ethanol into the solution under a water bath at 40-45 degrees C, stirring for 15-20 minutes, transferring the mixed solution into the reactor and reacting at 90-100 degrees C for 20-24 hours, cooling to room temperature, washing with dimethylformamide and absolute ethanol alternately for 5 times and drying in a vacuum freeze-drying oven, drying, adding the material in the muffle furnace, first heating at 320 degrees C for 2-3 hours, then heating at 550 degrees C and calcining for 1-1.5 hours, cooling to room temperature, adding the product in a tube furnace and passing hydrogen sulfide, and reacting at 450 degrees C for 60-70 minutes to obtain iron disulfide material. USE - The method is useful for preparing iron disulfide-zirconium dioxide-reduced graphene oxide-based flexible resistive random access memory. ADVANTAGE - The flexible resistive random access memory has small minimum bending radius, and excellent resistance change performance after circulation.