▎ 摘　　要

NOVELTY - Transferring large area chemical vapor deposition graphene doping involves generating linked by chemical bond on the catalytic substrate which has two-dimensional structure of chemical vapor deposition graphene (201) to obtain composite structure of catalytic substrate chemical vapor deposition graphene. The chemical vapor depositiongraphene has formed a dopant absorbing layer (301) to obtain catalytic substrate. The composite structure is set on dopant absorbing layer which forms supporting transfer layer (302) to obtain catalytic substrate. The catalytic substrate is separated to obtain the chemical vapor deposition graphene. The chemical vapor deposition graphene, dopant absorbing layer, supporting layer of composite structure are rotated at 180 degrees on the target substrate (401) to obtain the chemical vapor deposition graphene dopant absorbing layer, supporting layer, composite structure of the target substrate. USE - Method for transferring large area chemical vapor deposition graphene doping. ADVANTAGE - The method enables to transfer large area chemical vapor deposition graphene doping which has uniform and stable doping of graphene layer, and provides effective support and protection in the transferring process, avoides damage of the graphene membrane, ensures integrity. DETAILED DESCRIPTION - Transferring large area chemical vapor deposition graphene doping involves generating linked by chemical bond on the catalytic substrate (101) which has two-dimensional structure of chemical vapor deposition graphene (201) to obtain composite structure of catalytic substrate chemical vapor deposition graphene. The chemical vapor deposition graphene has formed a dopant absorbing layer (301) to obtain catalytic substrate. The composite structure is set on dopant absorbing layer which forms supporting transfer layer (302) to obtain catalytic substrate. The catalytic substrate is separated to obtain the chemical vapor deposition graphene. The chemical vapor deposition graphene, dopant absorbing layer, supporting layer of composite structure are rotated at 180 degrees on the target substrate (401) to obtain the chemical vapor depositiongraphene dopant absorbing layer, supporting layer, composite structure of the target substrate. The chemical vapor deposition graphene, dopant absorbing layer, supporting layer, composite structure of the target substrate are set in the dopant solution. The chemical vapor deposition graphene layer is processed by dopant absorbing layer, composite structure target for blowing and cleaning substrate. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a transfer large area chemical vapor deposition graphene doping layer. Chemical vapor deposition graphene (201) Dopant absorbing layer (301) Supporting transfer layer (302) Target substrate (401)