• 专利标题:   Graphene conductive film preparation method, involves growing graphene on metal foil surface, and conducting reduction treatment of deposition of metal foil graphene oxide under high temperature condition of protective gas.
  • 专利号:   CN103345979-A, CN103345979-B
  • 发明人:   JIN Z, MA P, ZHANG D, SHI J
  • 专利权人:   INST MICROELECTRONICS CHINESE ACAD SCI
  • 国际专利分类:   H01B013/00, H01B005/00, H01B005/14
  • 专利详细信息:   CN103345979-A 09 Oct 2013 H01B-013/00 201401 Pages: 8 Chinese
  • 申请详细信息:   CN103345979-A CN10263553 27 Jun 2013
  • 优先权号:   CN10263553

▎ 摘  要

NOVELTY - The method involves growing a graphene on a metal foil surface by performing chemical vapor deposition process. A metal foil of graphene oxide is deposited on the metal foil surface. Reduction treatment of the deposition of metal foil graphene oxide is conducted under high temperature condition of protective gas. The metal foil is dissolved in graphene oxide dispersion liquid and taken as a positive electrode. Conductive material is taken as a negative electrode. Positive and negative DC voltages are applied between the two electrodes. USE - Graphene conductive film preparation method. ADVANTAGE - The method enables reducing oxidized graphite alkene during graphene conductive film preparing process, and ensures better conductivity, high light transmittance and low preparation cost, and uses simple technique. DETAILED DESCRIPTION - The conductive material is a graphite and psi steel. The protective gas is argon, nitrogen/hydrogen. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating a graphene conductive film preparation method.'(Drawing includes non-English language text)'