• 专利标题:   Graphene dot structure to form network, useful to form electrode or conductive layer in lithium ion battery or hydrogen storage apparatus comprises core of semiconductor material, and shell of graphene formed on surface of core.
  • 专利号:   US2013134361-A1, KR2013058407-A, KR1910977-B1
  • 发明人:   LEE E, CHOI B, LEE J, WHANG D, CHOI B L, LEE E K, LEE J H, WHANG D M
  • 专利权人:   SAMSUNG ELECTRONICS CO LTD, SAMSUNG ELECTRONICS CO LTD, UNIV SUNGKYUNKWAN RES BUSINESS FOUND, UNIV SUNGKYUNKWAN RES BUSINESS FOUND
  • 国际专利分类:   H01B001/04, B01J012/00, C01B031/02, C23C016/26
  • 专利详细信息:   US2013134361-A1 30 May 2013 H01B-001/04 201337 Pages: 9 English
  • 申请详细信息:   US2013134361-A1 US681955 20 Nov 2012
  • 优先权号:   KR124398

▎ 摘  要

NOVELTY - A graphene dot structure (100) comprises: core (110) comprising semiconductor material; and shell comprising graphene (120) formed on surface of core. USE - As graphene dot structure, useful for forming network structure (all claimed), which are useful in energy field of high efficiency and high reactivity, such as, for electrode or conductive layer in lithium ion battery, hydrogen storage apparatus, sensor, capacitor, optical device, or electronic device. The network structure formed from graphene dot structure is also useful for forming graphene cage or graphene inclusion body having internal empty space for including, holding or capturing substance, by removing core from graphene dot structure. ADVANTAGE - The graphene dot structure and graphene dot network have same properties/characteristics of graphene, such as high electric charge mobility, and excellent thermal characteristics. Several graphene dot structures can be connected with each other to form stacked structure and/or extended horizontally, to form network of graphene dots. The graphene dot network has larger surface area, and thus its reactivity is increased. The graphene dot structure is useful in energy field of high efficiency and high reactivity, since it has large surface area due to three-dimensional structure. In addition, size of graphene dot structure can be variously controlled, so that graphene dot structure can be used in various fields depending on its size. It is possible to obtain graphene as nano- or micro-sized particles or dots, of which size may be controlled by adjusting manufacturing conditions, including concentrations of core material and carbon, temperature, and pressure. DETAILED DESCRIPTION - A graphene dot structure (100) comprises: core (110) comprising semiconductor material; and shell comprising graphene (120) formed on surface of core. The core has average size of 1 nm to 10 mu m. The core comprises first core; and second core formed on surface of first core and comprising semiconductor material. The first core comprises non-conductive material or metal. The graphene shell has greater than or equal to 1 layer. INDEPENDENT CLAIMS are included for the following: (1) network structure comprising several of the graphene dot structures; and (2) method for manufacturing graphene structure, involving: providing gas including semiconductor material and gas including carbon into reaction chamber; and performing chemical vapor deposition to form core of semiconductor material and shell of graphene on surface of core. DESCRIPTION OF DRAWING(S) - The figure shows perspective view illustrating graphene dot structure. Graphene dot structure (100) Core (110) Graphene shell/layer (120)