• 专利标题:   Non-invasive electroencephalogram sensor for converting ion current into electronic current, has reducing graphene oxide that is deposited on flexible substrate by soaking and drying.
  • 专利号:   CN114190947-A
  • 发明人:   ZHANG D, GUO C, ZHU S, SHU X, LI H, YANG J, YUAN H, LI Y
  • 专利权人:   UNIV SHANGHAI JIAOTONG
  • 国际专利分类:   A61B005/25, A61B005/263, A61B005/291
  • 专利详细信息:   CN114190947-A 18 Mar 2022 A61B-005/291 202247 Chinese
  • 申请详细信息:   CN114190947-A CN11498699 09 Dec 2021
  • 优先权号:   CN11498699

▎ 摘  要

NOVELTY - Non-invasive electroencephalogram sensor based on flexible substrate comprises a flexible substrate and a reducing graphene oxide, where the reducing the graphene oxide is deposited on the flexible substrate by soaking and drying. USE - The non-invasive electroencephalogram sensor for converting ion current into an electronic current available in a conductor for monitoring brain wave, and package transportation, biological medicine, heat preservation material and building engineering. ADVANTAGE - The non-invasive electroencephalogram sensor has good conductivity, low skin impedance, and scalp has good contact property, and can effectively monitor brain wave. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a preparation method of the non-invasive electroencephalogram sensor based on flexible substrate. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic diagram of the combination of the conductive sponge and the electrode slot prepared by the impregnation method. Non-invasive brain wave sensor (1) Electrode cap clamping groove (2) Contact electrode (3) Lead (4)