▎ 摘　　要

NOVELTY - The device has an insulating layer formed on a doped semiconducting substrate. An electrically conductive electrode i.e. gold electrode, is formed on the insulating layer. A graphene layer is formed on a top surface of the electrode, and provides an electrical connection between the electrode and the doped semiconducting substrate, where the device performs dual functions as a nano-switching/sensing device (102). The graphene layer is extended over an edge of the electrode and made to contact the doped semiconducting substrate to form a Schottky diode. USE - Nanostructure device i.e. graphene based reversible dual function nano-switch/sensor schottky diode device. ADVANTAGE - The device exhibits dual use functionality e.g. switching and sensing, and reversibility characteristics based on experimental performance of the device and allows graphene's single layer structure to make the graphene a zero-gap semiconductor, thus providing graphene superior electrical conduction and low electrical noise properties while offering reliable performance with long mean-time-before-failure. DETAILED DESCRIPTION - The doped semiconducting substrate is a silicon substrate doped with n-type doping agent or p-type doping agent. An INDEPENDENT CLAIM is also included for a method for detecting a volatile gaseous species. DESCRIPTION OF DRAWING(S) - The drawing shows a block diagram of a nanostructure system incorporating a dual function nanostructure device. Nanostructure system (100) Nano-switching/sensing device (102) Gaseous species (104) Control component (106) Output device (108)