▎ 摘　　要

NOVELTY - Method for increasing uniformity of epitaxial wafer of silicon carbide-pyrolytic graphene involves placing cleaned silicon carbide substrate on susceptor in a chemical vapor deposition apparatus, setting reaction chamber pressure to 30-120 mbar, shielding gas flow rate to 10-50 l/minute, carrying out pyrolysis at temperature of 1550-1650 degrees C for 30-60 minutes, slowly reducing temperature to 1400-1450 degrees C by linear ramping, annealing at 1400-1450 degrees C, cooling to room temperature, filling reaction chamber with protective gas and taking out epitaxial wafer of silicon carbide-pyrolytic graphene. USE - Method for increasing uniformity of epitaxial wafer of silicon carbide-pyrolytic graphene. ADVANTAGE - The method provides epitaxial wafer of silicon carbide-pyrolytic graphene with improved uniformity and consistency of carbon atom reconstitution during annealing.