▎ 摘　　要

NOVELTY - The transistor has a graphene active layer (110) that is mounted on an insulating substrate (100). A gate electrode is mounted on the graphene active layer. A graphene oxide layer is equipped between the graphene active layer and gate electrode. The upper side of graphene oxide layer is arranged coplanar to the upper side of graphene active layer. The graphene oxide layer is provided within the top of graphene active layer. Source/drain electrodes are respectively provided on upper sides of source/drain domain frame. USE - Graphene transistor. ADVANTAGE - Since the upper side of graphene oxide layer is arranged coplanar to the upper side of graphene active layer, the mobility and operation speed of graphene transistor can be improved. The manufacturing process of graphene transistor can be simplified. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacturing method of graphene transistor. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view illustrating the manufacturing process of graphene transistor. Insulating substrate (100) Graphene active layer (110) Gate insulating layer (120) Resist pattern (132)