▎ 摘　　要

NOVELTY - The structure has a base (102) comprising silicon dioxide (SiO2). A conductor (104) comprises copper extending through a portion of the base. A barrier (108) is formed between the base and the conductor. A graphene layer (112) includes a first side coupled to the conductor, and a second side perpendicular to the first side. A two-dimensional (2D) transition metal dichalcogenide (TMD) layer is coupled to the base and the second side of the graphene layer, where the 2D TMD layer comprises molybdenum disulfide, tungsten disulfide, molybdenum diselenide, tungsten diselenide, indium monoselenide, molybdenum telluride or tungsten telluride, the barrier comprises tantalum nitride or tantalum manganese dioxide. USE - Integrated circuit structure for use in a computing device. Uses include but are not limited to a laptop, a netbook, a notebook, a set-top box, a smartphone, a tablet, a personal digital assistant (PDA), a mobile phone, a desktop computer and a server. ADVANTAGE - The structure enables scaling to smaller and smaller features to increase densities of functional units on limited real estate of semiconductor chips and shrink transistor size to allow for incorporation of an increased number of memory or logic devices on a chip, thus lending to the fabrication of products with increased capacity and optimizing the performance of each device to be increased significantly. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for fabricating an integrated circuit structure. DESCRIPTION OF DRAWING(S) - The drawing shows a cross sectional view of a graphene contact. 102Base 104Conductor 108Barrier 112Graphene layer