▎ 摘　　要

NOVELTY - The memory has an electrode layer (120) formed on a substrate (100). A heat-conducting material layer (130) is formed on the electrode layer. A resistance change material layer (140) is arranged on the heat conductive material layer. A second electrode layer (150) is provided on the resistance change materials layer. The heat-conducting material is graphene. An electrode is selected from nickel, titanium, hafnium, zirconium, zinc, tungsten, cobalt, vanadium, copper, aluminum and platinum. The resistance change substance layer is arranged with a polymer that is made of poly cyclosiloxane, poly fluorescent monomer, poly indole-3-butyric acid and poly ethylene glycol dimethacrylate. USE - Resistive RAM. ADVANTAGE - The device stability is maximized by suppressing the influence of heat causing non-uniform switching operation characteristics to enable stable switching operation. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic diagram of the structure of a resistance variable memory using the graphene insertion layer. Substrate (100) Electrode layer (120) Heat-conducting material layer (130) Resistance change material layer (140) Second electrode layer (150)