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  • 专利标题:   Graphene electronic device e.g. FET has source electrode and drain electrode that are connected to both edges of multiple graphene channel layers.
  • 专利号:   US2012168722-A1, KR2012076061-A, CN102569398-A, US8785912-B2, CN102569398-B, KR1791938-B1
  • 发明人:   CHUNG H, LEE J, SHIN H, SEO S, LEE S, HEO J, YANG H, CHUNG H J, LEE J H, SHIN H C, SEO S A, LEE S H, HEO J S, YANG H J, SHIN J, HUH J, JUNG H
  • 专利权人:   SAMSUNG ELECTRONICS CO LTD, SNU R DB FOUND, SAMSUNG ELECTRONICS CO LTD, SAMSUNG ELECTRONICS CO LTD, SNU R DB FOUND, SAMSUNG ELECTRONICS CO LTD, UNIV SEOUL NAT INST IND ACAD COOP, UNIV SEOUL NAT R DB FOUND
  • 国际专利分类:   B82Y099/00, H01L029/775, H01L029/78, H01L029/10
  • 专利详细信息:   US2012168722-A1 05 Jul 2012 H01L-029/775 201246 Pages: 8 English
  • 申请详细信息:   US2012168722-A1 US225988 06 Sep 2011
  • 优先权号:   KR138041

▎ 摘　　要

NOVELTY - The device (100) has a gate electrode (120) that is provided on the substrate (110), and a gate insulating film (131) which covers the gate electrode. A gate insulating film (132) is located between multiple graphene channel layers (141) which are provided on the gate insulating film (131). The source electrode (150) and drain electrode (160) are connected to both edges of multiple graphene channel layers. The gate insulating films have thickness in the range 10-200 nm. USE - Graphene electronic device such as FET and radio frequency (RF) transistor. ADVANTAGE - The channel used in FET can be operated at room temperature. The carrier mobility of the device can be increased. The driving voltage can be reduced, and the driving speed can be increased. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of graphene electronic device. Graphene electronic device (100) Substrate (110) Gate electrode (120) Gate insulating films (131,132) Multiple graphene channel layers (141) Source electrode (150) Drain electrode (160)