▎ 摘　　要

NOVELTY - The device has a first polar plate connected to an emitting end of a plasma source. A second polar plate is fixed in a deposition furnace. The second polar plates are arranged opposite to the first polar plates. A first region of the deposition furnace is provided with an overlapped unit. The first polar board is connected to a grounding end of the plasma source, where the second polar board and the first and second polar boards are made of metal oxide semiconductor material. USE - Device for preparing graphene by plasma enhanced chemical vapour deposition (PECVD) for use in energy field, mechanical field, thermal field, optical field and electrical field. ADVANTAGE - Since the first polar plate and the second polar plate by capacitance to coupling the plasma, the distribution of the plasma is more uniform, growing the graphene on the substrate is uniform, improving the quality of the graphene film. By generating plasma by oppositely set polar plate, the area of the glow area generated between the two polar plates is larger than the area generated by the existing technology coil, so that the device can grow the graphene with large size. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for preparing graphene by PECVD. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic diagram of a device for preparing graphene by PECVD. First polar plate (30) Carrier (50) Growth substrate (60) Second area (120)