• 专利标题:   Directly growing of carbon material in production of high-quality graphene, involves adsorbing carbons onto substrate by supplying carbons to substrate, and removing unreacted carbon residues from substrate after supplying carbons.
  • 专利号:   US2020032388-A1, KR2020011821-A
  • 发明人:   KIM C, SHIN H, BYUN K, SHIN K, LEE C, NAM S, AN S, LEE J, CHO Y, SHIN H J, BYUN K E, SHIN K W, LEE C S, NAM S G, AHN S J, LEE J H, LEE J I, CHO Y C
  • 专利权人:   SAMSUNG ELECTRONICS CO LTD, SAMSUNG ELECTRONICS CO LTD
  • 国际专利分类:   C01B032/186, C23C014/02, C23C014/06, C23C016/26, C23C016/56, C23C016/44, C23C016/452, C23C016/46
  • 专利详细信息:   US2020032388-A1 30 Jan 2020 C23C-016/26 202011 Pages: 13 English
  • 申请详细信息:   US2020032388-A1 US244906 10 Jan 2019
  • 优先权号:   KR086770

▎ 摘  要

NOVELTY - Directly growing of carbon material involves adsorbing (S1) carbons onto a substrate by supplying carbons to the substrate, and removing (S2) unreacted carbon residues from the substrate after supplying carbons. USE - Directly growing of carbon material, such as carbon nanotubes in production of high-quality graphene. DESCRIPTION OF DRAWING(S) - The drawing shows a flow chart of growing carbon material. Adsorption of carbon (S1) Removal of carbon residues (S2) Repetition of adsorption of carbon and removal of carbon residues until graphene is formed (S3)