▎ 摘　　要

NOVELTY - The device has a source electrode that is mounted on a first region of channel layer (C1). A drain electrode is mounted on a second region of channel layer. A capping layer (CP1) that covers the channel layer, source electrode, and drain electrode, has an opening exposing a channel region of channel layer between electrodes. A gate insulating layer (IL1) is mounted on capping layer to cover channel region. A gate is mounted on gate insulating layer between source and drain electrode. The substrate includes plastic substrate, glass substrate, and silicon substrate. USE - Graphene device e.g. graphene transistor. ADVANTAGE - The position of the channel region is automatically determined by the positions of the source electrode and the drain electrode. The problems due to misalignment are prevented and suppressed. Since the gate, the source electrode, and the drain electrode are placed above the graphene layer which is used as a channel layer, it is possible to improve the degree of freedom in device design and to prevent or reduce damage to or deformation of the graphene layer. The productivity of a graphene device is increased while lowering manufacturing costs. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of the graphene device. Channel layer (C1) Capping layer (CP1) Insulating layer (IL1) Passivation layer (P1)