• 专利标题:   Preparation method of graphene-based composite material involves using mixed gas of argon gas and hydrogen as carrier gas, and obtaining graphene-based composite material by chemical vapor deposition, where graphene material grows parallel to substrate in composite material.
  • 专利号:   CN115692132-A
  • 发明人:   WEI M, CHEN L, GUO X, ZHAO Y, LI X, ZENG F, TANG S, TANG Z
  • 专利权人:   UNIV ZHENGZHOU AERONAUTICS
  • 国际专利分类:   C01B032/186, H01J001/304
  • 专利详细信息:   CN115692132-A 03 Feb 2023 H01J-001/304 202317 Chinese
  • 申请详细信息:   CN115692132-A CN11390497 08 Nov 2022
  • 优先权号:   CN11390497

▎ 摘  要

NOVELTY - The method involves providing a silicon nano-pore column array, depositing catalyst nickel nanometre crystal on the silicon nanometre hole column array, taking the silicon nano-pore column array deposited with nickel nano-crystalline as substrate, taking methane as carbon source, using mixed gas of argon gas and hydrogen as carrier gas, and obtaining a graphene-based composite material by chemical vapor deposition, where graphene material grows parallel to the substrate in the composite material. USE - The method is useful for preparing graphene-based composite material. ADVANTAGE - The method: enables depositing catalyst nanometer metal nickel on silicon nano-pore column array; grows parallel to the substrate of graphene sheet; overcomes that the structure of vertical substrate is not stable; greatly enhances the emission stability in electronic emitting process; has relatively high perimeter area ratio; and ensures field emission density of material.