▎ 摘　　要

NOVELTY - Memristor based on ferroelectric top gate, comprises a first electrode and a second electrode arranged on a substrate at intervals. A resistance change layer is set between the first electrode and the second electrode. A ferroelectric layer is set on the resistance change layer. A top gate is set on the ferroelectric layer. USE - Memristor based on ferroelectric top gate used in semiconductor field, and information storage and emerging brain-type calculation field. ADVANTAGE - The memristor: utilizes the ferroelectric effect to control the storage effect of the memristor; can realize the bidirectional and non-volatile control of the memristor behavior; and utilizes the ferroelectric effect to optimize the memory performance of the device during the control process, e.g. reducing the device operating voltage, multi-bit storage and fast write/erase operations. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for: preparation method of memristor based on ferroelectric top gate; and control method of memristor storage model. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the memristor based on ferroelectric top gate used in e.g. semiconductor field (Drawing includes non-English language text).