• 专利标题:   Manufacture of graphene raw material for graphene wiring structure, involves forming mask material for side surface of catalyst metal layer on substrate and supplying carbon source to surface of catalyst metal layer.
  • 专利号:   WO2012173145-A1
  • 发明人:   NARITSUKA S, MARUYAMA T
  • 专利权人:   UNIV MEIJO
  • 国际专利分类:   C01B031/02
  • 专利详细信息:   WO2012173145-A1 20 Dec 2012 C01B-031/02 201303 Pages: 61 Japanese
  • 申请详细信息:   WO2012173145-A1 WOJP065131 13 Jun 2012
  • 优先权号:   JP131743, JP149418, JP163193

▎ 摘  要

NOVELTY - A catalyst metal layer (16) on substrate (12) stimulates graphenization. A mask material which masks the side surface of predetermined-shaped catalyst metal layer is formed. A carbon source is supplied to surface of the catalyst metal layer to grow graphene. The graphene is taken out of predetermined shape from catalyst metal layer as graphene raw material (10). USE - Manufacture of graphene raw material used for graphene wiring structure (all claimed) for transistor, fine electrical wiring, bus-bar of lithium secondary battery and harness of motor vehicle. ADVANTAGE - The method efficiently manufactures graphene raw material with excellent peeling resistance with respect to electrode terminal. The graphene wiring structure using graphene raw material has excellent flexibility and high electroconductivity. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for graphene wiring structure, which has insulated resin layer and graphene layer laminated repeatedly, such that insulated resin layer formed in upper and lower sides of each graphene layer. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view explaining manufacture of graphene raw material. Graphene raw material (10) Substrate (12) Catalyst metal layer (16) Electrodes (18,20)