• 专利标题:   Method for forming graphene pattern, involves placing mask having predetermined pattern above graphene thin film layer that is patterned through photolithography process.
  • 专利号:   US2014212818-A1, KR2014096863-A, US9128377-B2
  • 发明人:   KANG S, JEON B, KIM J
  • 专利权人:   KANG S, JEON B, KIM J, SAMSUNG DISPLAY CO LTD, SAMSUNG DISPLAY CO LTD
  • 国际专利分类:   G03F007/20, G03F007/26, H01L021/027
  • 专利详细信息:   US2014212818-A1 31 Jul 2014 G03F-007/20 201455 Pages: 12 English
  • 申请详细信息:   US2014212818-A1 US911374 06 Jun 2013
  • 优先权号:   KR010001

▎ 摘  要

NOVELTY - The method involves transferring a graphene thin film layer (104) onto a surface of a photosensitive film (102). The photosensitive film having the graphene thin film layer is transferred and attached to a substrate (110). A mask having a predetermined pattern is placed above the graphene thin film layer. The graphene thin film layer is patterned through photolithography process. USE - Method for forming graphene pattern. ADVANTAGE - Stability and reliability of the graphene micro-pattern can be secured efficiently. Visibility of the photosensitive film can be improved. DESCRIPTION OF DRAWING(S) - The drawings show the sectional views illustrating the method for forming graphene pattern. Graphene embedded dry photosensitive film (100) Photosensitive film (102) Graphene thin film layer (104) Substrate (110)