▎ 摘　　要

NOVELTY - The detector has p-type or n-type doped indium phosphide layer (1), graphene layer (2) and surface electrode (3) that are arranged sequentially from bottom to top. An insulation layer (4) is provided in specific area of indium phosphide layer and is made of silicon material, silicon nitride material, silicon oxynitride material, aluminum oxide material and boron nitride material. The graphene layer is set on indium phosphide layer and is contacted with the surface electrode. The surface electrode is made of gold, palladium, silver, titanium, chromium, nickel, platinum and aluminum. USE - Graphene/indium phosphide photoelectric detector. ADVANTAGE - Since the graphene/indium phosphide photoelectric detector uses carrier migration rate, the high photoelectric response of the photoelectric detector is achieved. The manufacturing process of the photoelectric detector is simplified. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method of preparing graphene/indium phosphide photoelectric detector. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the photoelectric detector. Indium phosphide layer (1) Graphene layer (2) Surface electrode (3) Insulation layer (4)