▎ 摘　　要

NOVELTY - The structure has an auxiliary unit includes an aluminum nitride ceramic bottom plate (22), an aluminum nitride ceramic top cover (21) made with patterned through holes, a patterned upper and lower copper conductive layer, a conductive copper pillar (13), and nano silver glue. A graphene-based heat conducting block (27) is made on a periphery of the aluminum nitride ceramic bottom plate and the ceramic top cover. An IGBT chip (15) and a freewheeling diode chip (14) form a group. The gate and emitter of the IGBT chip are respectively connected to the signal output terminals and are connected to the aluminum nitride ceramic top cover through the conductive copper pillars. The copper fills the interconnection through holes to lead out signals. A collector of the IGBT chip leads to the collector signal output terminal through an upper copper conductive layer. The freewheeling diode is a silicon-based fast recovery diode or a silicon carbide-based Schottky barrier diode. USE - Embedded packaging structure of three-phase inverter power module used for army, communication, uninterrupted power supply system of factory and enterprise, distributed system and micro-grid system. ADVANTAGE - The power unit is embedded in the middle of the ceramic substrate, and the periphery of ceramic substrate is made of graphene-based heat conducting block, so as to increase the transverse effective radiating path. The copper bottom aluminum fin radiator is manufactured by cold forging process and module bottom are welded to replace the heat conducting silicone grease to connect the traditional aluminium radiator and the bottom of the module longitudinal radiating structure, to improve the radiating performance and reliability of module. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for an additive manufacturing process of a three-phase inverter power module. DESCRIPTION OF DRAWING(S) - Lower copper conductive layer (11) First nano-silver adhesive layer (12) Conductive copper pillar (13) Freewheeling diode chip (14) IGBT chip (15) Second nano-silver glue layer (16) Upper copper conductive layer (17) Communication hole (18) Hole (19) Pouring sealant (20) Aluminum nitride ceramic top cover (21) Aluminum nitride ceramic bottom plate (22) Lower surface copper interconnection layer (23) Welding paste layer (24) Copper bottom aluminum fin radiator (25) Aluminum fin (26) Graphene-based heat conducting block (27)