• 专利标题:   Preparation of nitrogen-doped graphene used for preparing nanocrystalline copper catalyst by putting graphene oxide into microwave oven, vacuumizing, purging with nitrogen gas, heating, feeding ammonia gas, stop heating, and vacuumizing.
  • 专利号:   CN105293484-A, CN105293484-B
  • 发明人:   CHENG M, LI H, REN J, REN M, JIN Y, SHI R, ZHAO J
  • 专利权人:   UNIV TAIYUAN TECHNOLOGY
  • 国际专利分类:   B01J027/24, B01J032/00, C01B031/04
  • 专利详细信息:   CN105293484-A 03 Feb 2016 C01B-031/04 201637 Pages: 7 Chinese
  • 申请详细信息:   CN105293484-A CN10907159 10 Dec 2015
  • 优先权号:   CN10907159

▎ 摘  要

NOVELTY - Preparation of nitrogen-doped graphene by putting graphene oxide into microwave oven, vacuumizing, purging with nitrogen gas, opening microwave oven cooling water circulation device, turning on control switch, adjusting microwave power, and heating; and feeding ammonia gas, turning off control switch, stop heating, vacuumizing, cooling, purging with nitrogen gas, and opening microwave door. USE - Method for preparation of nitrogen-doped graphene used for preparing nanocrystalline copper catalyst (claimed). ADVANTAGE - The nitrogen-doped graphene has good thermal conductivity, high catalytic activity of nanocrystals, high selectivity and stability, and inexpensive raw materials. DETAILED DESCRIPTION - Preparation of nitrogen-doped graphene comprises putting graphene oxide into microwave oven, vacuumizing to - 0.9 MPa, purging with nitrogen gas at - 0.3 MPa twice, vacuumizing to - 0.9 MPa, and purging with nitrogen gas at - 0.5 MPa; opening microwave oven cooling water circulation device, turning on control switch, adjusting microwave power, and heating from room temperature to 350 degrees C for 60 seconds; and feeding ammonia gas, turning off control switch, stop heating, vacuumizing to - 0.9MPa, opening cooling water circulation device to carry out cooling at 50 degrees C, closing device, purging with nitrogen gas at standard atmospheric pressure, and opening microwave oven door. An INDEPENDENT CLAIM is included for preparation of preparation of nanocrystalline copper catalyst comprising dispersing nitrogen-doped graphene in ethanol, ultrasonically mixing, dropping into quartz plate, air-drying, putting into atomic layer deposition chamber, and sealing; pressurizing chamber to 150 Pa with air, gasifying with acetyl acetone copper and hydrogen as precursor, setting body temperature to 150 degrees C, deposition temperature to 250 degrees C, deposition time for 10 seconds, cleaning time for 30 seconds and number of cycles to 100; and starting deposition reaction, cooling to room temperature, and taking out product.