• 专利标题:   Preparing large-area multilayer graphene comprises providing substrate in reaction chamber, annealing, introducing carbon source, performing chemical vapor deposition reaction and adding water vapor during chemical vapor deposition reaction.
  • 专利号:   CN111847432-A
  • 发明人:   LIU Z, CHEN B, SUN L, LI Y, DING Q, ZHAO Z, LIANG Y, WANG Y, LIU H
  • 专利权人:   BEIJING GRAPHENE INST, UNIV PEKING
  • 国际专利分类:   C01B032/186
  • 专利详细信息:   CN111847432-A 30 Oct 2020 C01B-032/186 202095 Pages: 15 Chinese
  • 申请详细信息:   CN111847432-A CN10725305 24 Jul 2020
  • 优先权号:   CN10725305

▎ 摘  要

NOVELTY - Preparing large-area multilayer graphene comprises providing substrate, placing the substrate in the reaction chamber, heating and annealing the substrate, introducing a carbon source, and performing chemical vapor deposition reaction to grow graphene on the annealed substrate, introducing water vapor into the reaction chamber during the chemical vapor deposition reaction, and maintaining the pressure during the growth of graphene to 20-400 Torr. USE - The method is useful for preparing large-area multilayer graphene. ADVANTAGE - The method: has simple process and low cost. The graphene: has uniform number of layers and large area. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for large-area multilayer graphene obtained by above method.