▎ 摘　　要

NOVELTY - Preparing three-dimensional semiconductor avalanche photoelectric detection chip involves pre-planning a doped region on a silicon-on-insulator (SOI) substrate, where the SOI substrate comprises a semiconductor material substrate (1), an insulating layer (2) and an upper semiconductor (3). The doped region comprises one pair of comb-shaped regions. The pair of comb-shaped regions comprises a P-type comb-shaped region and an N-type comb-shaped region. The comb teeth of the P-type comb-shaped region and the N-type comb-shaped region are correspondingly connected to perform a multiple diffusion or ion implantation on the semiconductor on the insulating layer to form a P-type substrate (4) according to the pre-planned doped region through diffusion or ion implantation on the P-type substrate, respectively heavily doped to form heavily doped N-type region (5) and heavily doped P-type region in the N-type comb region and the P-type comb region. USE - Three-dimensional semiconductor avalanche photoelectric detection chip preparation method. ADVANTAGE - The semiconductor avalanche photoelectric detection chip has a three-dimensional structure, so as to improve the absorption area and detection efficiency of the semiconductor avalanche photoelectric detection chip. DETAILED DESCRIPTION - Preparing three-dimensional semiconductor avalanche photoelectric detection chip involves pre-planning a doped region on a silicon-on-insulator (SOI) substrate, where the SOI substrate comprises a semiconductor material substrate (1), an insulating layer (2) and an upper semiconductor (3). The doped region comprises one pair of comb-shaped regions. The pair ofcomb-shaped regions comprises a P-type comb-shaped region and an N-type comb-shaped region. The comb teeth of the P-type comb-shaped region and theN-type comb-shaped region are correspondingly connected to perform a multiple diffusion or ionimplantation on the semiconductor on the insulating layer to form a P-type substrate (4) according to the pre-planned doped region through diffusion or ion implantation on the P-type substrate, respectively heavily doped to form heavily doped N-type region (5) and heavily doped P-type region in the N-type comb region and the P-type comb region. An one of the N-type comb-shaped region and the P-type comb-shaped region is completely heavily doped. The other one is only heavily doped in the region other than the comb teeth. The pair of metal electrodes are respectively connected with the N-type comb-shaped region and the P-type comb-shaped region, and followed by etching and removing the semiconductor material in the non-planned region on the semiconductor on the insulating layer to form isolation. DESCRIPTION OF DRAWING(S) - The drawing shows flow block diagram of a method for preparing a three-dimensional semiconductor avalanche photoelectric detection chip. Semiconductor material substrate (1) Insulating layer (2) Upper semiconductor (3) P-type substrate (4) N-type region (5)