▎ 摘　　要

NOVELTY - The system (100) has a solar cell (110) generating electrical energy based on sunlight. An interface layer (120) is located below the solar cell and includes an infrared absorbing layer for absorbing infrared rays penetrating through the cell. A thermoelectric channel is positioned below the interface layer and positioned between first electrode and second electrode. The metal material among Gold (Au), Aluminum (Al), Platinum (Pt), Silver (Ag), Titanium (Ti) and Tungsten (W) and thermoelectric channel is Silver oxide (Ag.2), Silver sulphite (Ag2 Se), Copper sulfide (Cu2Se), Copper telluride (Cu2Te), Mercury telluride (HgTe), Mercury selenide (HgSe), Bismuth telluride (Bi2 Te3), Titanium carbide (Ti3 C2) , Molybdenum carbide (Mo2 C), Molybdenum disulfide (MoS2) and Tungsten disulfide (WS2), silicon (Si) solar cell. The transfer material are from boron nitride (BN), reduced graphene oxide (rGO), aluminum nitride (AlN), silicon carbide (SiC) and beryllium oxide (BeO). USE - Energy harvesting system for generating electrical energy by using solar cell and thermoelectric element. ADVANTAGE - The energy generation efficiency of the energy harvesting system is improved by effectively transferring heat from a solar cell to an upper portion of a thermoelectric device by using the interface layer between the solar cell and the thermo-electric device. The energy harvesting system is formed as a fusion element while maintaining the performance of the solar cell and utilizes minimum space through the application of the thin interface layer, so that the efficiency of space utilization is improved. The magnitude of heat transferred from the solar cell to the thermoelectric element is increased based on a temperature increase due to infrared absorption. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of energy harvesting system for generating electrical energy by using solar cell and thermoelectric element. (Drawing includes non-English language text) 100Energy harvesting system 110Solar cell 120Interface layer 130Thermoelectric device