▎ 摘　　要

NOVELTY - The semiconductor device (200,300) has a substrate. Two source or drain regions (S or D regions) are set over the substrate. A channel region (210,310) is located between the two S or D regions, and is comprised of a semiconductor material. A layer of deposited capacitor material (DCM) is set over the channel region. A dielectric layer is set over the DCM layer. A metallic gate electrode layer is set over the dielectric layer. USE - Semiconductor device e.g. integrated circuit, transistor, gate-all-around transistor (GAA transistor) and FinFET. ADVANTAGE - The production efficiency is improved and costs associated with production are reduced. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for manufacturing semiconductor device. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the logic device and an integrated circuit capacitor. (Drawing includes non-English language text) Integrated circuit (100) Semiconductor device (200,300) Channel region (210,310) S or D contact (314) Gate stack (320)