▎ 摘　　要

NOVELTY - The device (100') has a graphene channel layer (130) placed vertical to a substrate (110). A gate insulating layer (140) covers a side surface of the channel layer. A gate electrode (150) is placed on the insulating layer. A source electrode (171) and a separate drain electrode are placed on another side surface of the channel layer, and comprise catalyst metal for growing graphene. The channel layer comprises a horizontal unit (132) extending parallel to the substrate in direction of the latter side surface. The insulating layer and gate electrode overlap the horizontal unit. USE - Fin-type graphene device i.e. graphene FET (claimed), for an optical sensor and a photoelectric device. ADVANTAGE - The device increases gate voltage so as to reduce energy gap of a semiconductor layer accordingly, so that carriers injected through the source electrode move to the semiconductor layer through the graphene channel layer and finally to the drain electrode, while facilitating increased on/off ratio. DESCRIPTION OF DRAWING(S) - The drawing shows a cross sectional view of a fin-type graphene device. Fin-type graphene device (100') Substrate (110) Graphene channel layer (130) Horizontal unit (132) Gate insulating layer (140) Gate electrode (150) Source electrode (171)