▎ 摘　　要

NOVELTY - The method involves cutting the ultra-thin copper foil, pressing the copper foil and the target integrated circuit chip, placing a chip sample in a thermal chemical vapor deposition system of three-temperature gradient temperature control graphene low temperature growth. A front temperature area in the system is set as a high temperature source for pyrolysis carbon source. A temperature of a middle temperature area is set between the front and back temperature areas as a temperature buffer area. A chip surface is coated on a chip graphite on the chip. The chip is dipped into copper corrosion liquid. A lower copper is etched from an edge of a graphite through a poly(methyl methacrylate) layer until the copper is completely removed. A residual corrosive chip is used on deionized water and dried. The poly(methyl methacrylate) is washed with acetone and isopropanol to obtain a patterned graphene directly grown on an integrated circuit chip. USE - The method is useful for directly growing patterned graphite on an integrated circuit chip of a graphene device in biological, energy, and micro-electronics fields. ADVANTAGE - The method solves the transfer-free growth of the graphite, photolithographic patterning growth and low temperature growth, so as to realize compatibility with the integrated circuit preparation. The method uses single crystal copper as catalyst of low-temperature growth graphite obviously improves the carbon atom diffusion of the catalyst surface solves the problem of graphite discontinuous and defect of growing at low temperature, and improves the quality of low temperature graphite. It adopts pressing process preparation single-crystal copper catalytic layer, simple technique, without high temperature processing, the type of the substrate is not limited, uses the conventional methane as carbon source and avoids the physical damage caused by chip surface energy plasma. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic diagram of the copper foil and integrated circuit chip pressing machine under a certain temperature and pressure condition for pressing. Pressing machine (1) Ccopper foil (2) Target integrated circuit chip step (3)