• 专利标题:   Graphene based semiconductor optimizing heat conducting structure, has single graphene sheet connected with metal radiator and heat conducting plate, where single graphene sheet is formed as single-layer structure, double-layer folded structure or multi-layer structure.
  • 专利号:   CN209659701-U
  • 发明人:   LI W, SONG B, CHEN M, JIN X, FAN Y
  • 专利权人:   SUZHOU ANYWAVE COMMUNICATION TECHNOLOGY
  • 国际专利分类:   H01L023/367, H01L023/373, H05K001/02
  • 专利详细信息:   CN209659701-U 19 Nov 2019 H05K-001/02 201994 Pages: 6 Chinese
  • 申请详细信息:   CN209659701-U CN21758834 29 Oct 2018
  • 优先权号:   CN21758834

▎ 摘  要

NOVELTY - A semiconductor-based optimizing heat conducting structure of graphene, comprising a single radiator sheet of metal graphene sheet, wherein the single graphene sheet are connected with the metal radiator and a heat conducting plate face is set on the semiconductor contact, single graphene sheet is a single layer structure, double-layer structure or multi-layer structure. In the utility model, the single graphene sheet folded and arranged between the semiconductor heat source and the metal radiator and are respectively contacted so as to optimize heat dissipation surface with it. The utility model can fully develop the graphene is as high as the thermal conductivity of 1500-1700w/mk and thermal diffusion rate is high, so it can quickly reduce the hot spot (heat accumulated point) temperature, heat dissipation of the semiconductor circuit.