• 专利标题:   Graphene film in which many ribbon-shaped graphenes having a longitudinal edge structure of an arm chair type constitute a network structure used for manufacturing electronic device and top gate top contact thin film transistor.
  • 专利号:   US2015144884-A1, JP2015101499-A, JP6187185-B2
  • 发明人:   YAMAGUCHI J, SATO S
  • 专利权人:   NAT INST ADVANCED IND SCI TECHNOLOGY, FUJITSU LTD
  • 国际专利分类:   C01B031/04, H01L029/10, H01L029/16, H01L029/66, H01L029/786, C01B031/02, H01L021/02, H01L021/20, H01L021/28, H01L021/336, H01L051/05, H01L051/30, H01L051/40, C01B032/182
  • 专利详细信息:   US2015144884-A1 28 May 2015 H01L-029/16 201539 Pages: 14 English
  • 申请详细信息:   US2015144884-A1 US550045 21 Nov 2014
  • 优先权号:   JP242251

▎ 摘  要

NOVELTY - Graphene film in which many ribbon-shaped graphenes having a longitudinal edge structure of an arm chair type constitute a network structure is claimed. USE - The graphene film is useful for manufacturing an electronic device (claimed), and top gate top contact thin film transistor. ADVANTAGE - The reliable graphene film provides complete semiconductive properties without mixing of metallic properties, redacts off current, achieves excellent properties with field-effect mobility of several tens to several hundreds of cm2/Vs at a high current on/off ratio of 105 or more for practical use, and prevents variations in electric properties. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for: (1) an electronic device comprising an insulating material, graphene film formed above the insulating material, and an electrode formed under or on the graphene film above the insulating material, where in the graphene film; and (2) manufacturing electronic device comprising forming graphene film in which many ribbon-shaped graphenes having a longitudinal edge structure of an arm chair type constitute a network structure above an insulating material and forming electrode under or on the graphene film above the insulating material.