1. 平台首页
  2. 国际专利信息
  • 专利标题:   Formation of graphene-based device used in electronic field, involves depositing carbon on substrate having dielectric material, annealing carbon-deposited substrate, and forming ordered graphene on dielectric material.
  • 专利号:   US2012168721-A1, WO2012092061-A2, WO2012092061-A3, US8685802-B2
  • 发明人:   KELBER J A, GADDAM S S, BJELKEVIG C L
  • 专利权人:   UNIV NORTH TEXAS, UNIV NORTH TEXAS
  • 国际专利分类:   H01L021/04, H01L029/66, C01B031/02, C23C016/26, H01B003/10
  • 专利详细信息:   US2012168721-A1 05 Jul 2012 H01L-029/66 201246 Pages: 12 English
  • 申请详细信息:   US2012168721-A1 US980763 29 Dec 2010
  • 优先权号:   US980763

▎ 摘　　要

NOVELTY - Carbon is deposited on a substrate (200) having dielectric material (201), and annealing process is performed with respect to the carbon-deposited substrate to form ordered graphene (203) from the carbon on the dielectric material. Thus, graphene-based device is formed. USE - Formation of graphene-based device used in electronic field. ADVANTAGE - The method efficiently provides graphene-based device. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of graphene-based device. Substrate (200) Dielectric material (201) Interfacial layer (202) Graphene (203)