▎ 摘　　要

NOVELTY - The method involves forming a first dielectric material layer (60) on a substrate (52) having an integrated circuit (IC) device and etching the first dielectric material layer to form a first trench aligned with a device feature of the IC device. A barrier layer is formed in the first trench. A first metal layer is formed within the first trench and adjacent the barrier layer. A first graphene layer is formed within the first trench and adjacent the first metal layer. USE - Construction method of interconnect structure for semiconductor structure or integrated circuit structure. ADVANTAGE - The overall conductivity and further the reliability of the semiconductor structure are enhanced as carbon nanotubes and graphene are good conductive materials. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a semiconductor structure having an interconnect structure. Substrate (52) First dielectric material layer (60) Etch stop layers (62) First conductive feature (64) Second conductive feature (70)