▎ 摘　　要

NOVELTY - Preparation of structured graphene by reaction of silicon carbide (SiC) and chlorine (Cl2) based on copper (Cu) film annealing includes washing SiC samples regularly; depositing a layer of silicon dioxide (SiO2) on the surface of washed SiC samples; etching a pattern window; putting the window opened samples in a quartz tube; reacting SiC with Cl2 to form carbon film; putting the carbon samples in hydrofluoric acid buffer solution to remove SiO2 outside the window; putting the SiO2-removed carbon samples on Cu film; placing in argon (Ar) atmosphere; and annealing. USE - Preparation of structured graphene (claimed) used for preparing microelectronic devices. ADVANTAGE - The method is simple; has high safety; and provides structured graphene with smooth surface, good continuity, and low porosity. DETAILED DESCRIPTION - Preparation of structured graphene by reaction of SiC and Cl2 based on Cu film annealing comprises: (A) washing SiC samples regularly to remove the pollutants; (B) depositing a layer of SiO2 having a thickness of 0.4-1.2 mu m as cover film by plasma enhanced chemical vapor deposition (PECVD) method; (C) coating a layer of photoresist on the cover film; etching a pattern window of the same shape of desired device substrate; and exposing SiC to form structured pattern; (D) putting the window opened samples in quartz tube; and heating at 700-1100 degrees C; (E) charging Ar and Cl2 mixed gas in the tube for 4-10 minutes to react Cl2 with SiC and form carbon film; (F) putting the carbon samples in hydrofluoric acid buffer solution to remove SiO2 outside window; and (G) putting the SiO2-removed carbon samples on Cu film; placing in Ar atmosphere; annealing at 900-1200 degrees C for 15-25 minutes to make the carbon film reconstruct into structured graphene at the window; and taking out the Cu film from the graphene samples.