• 专利标题:   Metal-doped ITO transparent conductive film for optoelectronic device, has inner protective layer comprising moisture-proof layer connected with lower surface of heat-resistant layer, and anti-scraping and fog layer.
  • 专利号:   CN216435481-U
  • 发明人:   YANG B, LUO J, WANG Q
  • 专利权人:   SHENZHEN QIANGFENG ELECTRONIC TECHNOLOGY CO LTD
  • 国际专利分类:   H01B005/14
  • 专利详细信息:   CN216435481-U 03 May 2022 H01B-005/14 202244 Chinese
  • 申请详细信息:   CN216435481-U CN23213874 20 Dec 2021
  • 优先权号:   CN23213874

▎ 摘  要

NOVELTY - The utility model model claims a novel metal-doped ITO transparent conductive film, belonging to the technical field of transparent conductive thin film; comprising a flexible transparent substrate, an outer protective layer and an inner protective layer; the outer protective layer comprises a graphene layer tightly attached to the outer surface the flexible transparent substrate, an ultraviolet barrier layer tightly attached to the outer surface of the graphene layer and a protective layer tightly attached to the outer surface the ultraviolet barrier layer and used for sealing and protecting; the inner protective layer comprises a heat-resistant layer attached to the lower surface of the flexible transparent substrate, a moisture-proof layer connected with the lower surface of the heat-resistant layer and a scratch-resistant fog-proof layer adhered with the lower surface of the moisture-proof layer; the layer graphene a single-atom or graphene-atom graphene layer; The ultraviolet barrier layer is a UV cured hardened layer. The novel metal-doped ITO transparent conductive film has simple structure and long service life.