▎ 摘　　要

NOVELTY - The method involves applying (S1) positive constant voltage on the substrate which is positioned in the plasma space phase or inside of chamber for removing oxide existing in metallic board. The negative voltage is applied (S2) on the substrate positioned in the inside of chamber for moving carbocation to substrate and evaporating carbon film. The electric field and bias is controlled (S3) and carbon film on substrate positioned in plasma space phase is evaporated. The non-conductive film including carbon component is changed (S4) to conductive film of carbon bonding. USE - Method for growing graphene nanowall using electric field control technique. ADVANTAGE - The non-conductive film including carbon is efficiently grown on the arbitrary substrate in the low temperature. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating the method for growing graphene nanowall.(Drawing includes non-English language text) Step for applying positive constant voltage on substrate which is positioned in plasma space phase (S1) Step for applying negative voltage on substrate (S2) Step for controlling electric field and bias (S3) Step for changing non-conductive film including carbon component to conductive film of carbon bonding (S4)