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  • 专利标题:   Pretreating graphene growth substrate comprises using copper foil or copper-nickel alloy foil as the base, polishing base, placing in tube furnace for annealing, taking annealed substrate of tube furnace, and polishing.
  • 专利号:   CN111188021-A
  • 发明人:   HAO Y, NIU W
  • 专利权人:   UNIV NANJING
  • 国际专利分类:   C23C016/02, C23C016/26, C23C016/455, C25F003/22, C30B025/00, C30B029/02, C30B029/64
  • 专利详细信息:   CN111188021-A 22 May 2020 C23C-016/02 202049 Pages: 7 Chinese
  • 申请详细信息:   CN111188021-A CN10061013 19 Jan 2020
  • 优先权号:   CN10061013

▎ 摘　　要

NOVELTY - Pretreating graphene growth substrate comprises using copper foil or copper-nickel alloy foil as the base, polishing the base, placing in a tube furnace for annealing, taking annealed substrate of the tube furnace, polishing for second time, placing on heating table for heating and oxidation, and using pretreated substrate for chemical vapor deposition growth of graphene. USE - The method is useful for pretreating graphene growth substrate.