▎ 摘　　要

NOVELTY - The utility model claims a source-drain light doping heterogeneous gate graphene nanometer strip field effect transistor, comprising a source region, a drain region, a channel, a gate oxide layer and double-gate; two end of grid comprises grid and grid middle, two ends of the gate work function and gate work function are different; channel is graphite nanotubes, located between the source region and the drain region, the source region and the drain region both comprise N-type heavily doped region and the extension regions near the graphene nanotubes, N-type heavily doped region are N type lightly doped graphene and nanotubes, source extension regions and drain extension regions; a gate oxide layer located on the two side of the graphene nano -, double-gate on the gate oxide layer. The utility model reduces the device performance degradation, has a greater current switching ratio, delay time is shorter, a sub-threshold swing is smaller, higher voltage gain of source-drain light doping heterogeneous gate graphene nanometer strip field effect tube.