▎ 摘　　要

NOVELTY - Chemical vapor deposition (CVD) graphene production device comprises a movably connected support base, a multiple graphene growth substrates and a top cover. The support base is a ring-shaped closed structure with a multiple through holes arranged in parallel at intervals on the top, and a fixing column is installed on an inner side wall of the through holes. The graphene growth substrate has a fixed end that is bent and is provided with an opening adapted to the fixed column. A fixing plate is provided on the inner side wall of the top cover, and the fixing plate is provided with an opening adapted to the fixing column. The number of the fixing plates is less than or equal to the number of the through holes. The graphene growth substrate is inserted into the through hole. The fixing plate (31) of the top cover (3) is inserted into the through hole (11) and sleeved on the fixing column (111) through the opening to clamp the fixing end of the opening (21). USE - Chemical vapor deposition (CVD) graphene production device. ADVANTAGE - The graphene film prepared by the device has no wrinkles, and the space utilization rate of the graphene growth device is improved. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for preparing a graphene film, which involves: (A) assembling the device in a reaction chamber and heating it to perform annealing treatment on the graphene growth substrate; and (B) introducing a gaseous carbon source to chemically react and deposit a graphene film on the graphene growth substrate. DESCRIPTION OF DRAWING(S) - The drawing shows schematic view of CVD graphene device. Top cover (3) Hole (11) Opening (21) Fixing plate (31) Fixing column (111)