• 专利标题:   Preparing vertical graphene-based thermal interface material comprises preparing vertical graphene through plasma-enhanced chemical vapor deposition process under action of electric field.
  • 专利号:   CN112830478-A, CN112830478-B
  • 发明人:   ZHANG J, XU S, JI N, CHEN Z
  • 专利权人:   BEIJING GRAPHENE INST, UNIV PEKING
  • 国际专利分类:   C01B032/186, C09K005/14
  • 专利详细信息:   CN112830478-A 25 May 2021 C01B-032/186 202150 Pages: 21 Chinese
  • 申请详细信息:   CN112830478-A CN10053372 15 Jan 2021
  • 优先权号:   CN10053372

▎ 摘  要

NOVELTY - Preparing vertical graphene-based thermal interface material comprises preparing vertical graphene through plasma-enhanced chemical vapor deposition process under the action of an electric field, where the direction of the electric field is the same as the growth direction of the vertical graphene. USE - The method is useful for preparing vertical graphene-based thermal interface material. ADVANTAGE - The method: adopts simple device; and has simple process flow and strong repeatability. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for: (1) vertical graphene-based thermal interface material prepared by the above method; and (2) device for preparing vertical graphene-based thermal interface material, including chemical vapor deposition furnace, plasma source and electric field generating component. The electric field generating component includes a first electrode plate, a second electrode plate and a direct current power supply. The first electrode plate and the second electrode plate are both arranged in the reaction chamber of the chemical vapor deposition furnace. The first electrode plate is connected to the cathode of the DC power supply. The second electrode plate is connected to the anode of the DC power supply. The first electrode plate is located above the second electrode plate.