▎ 摘　　要

NOVELTY - The transistor has a graphene layer (103) covered on a semiconductor substrate (101) that is formed with a gap. A semiconductor layer (104) is covered on the graphene layer and the gap. A source electrode (108) is arranged on the semiconductor layer. A first portion of the graphene layer is located on the gap. A drain electrode is arranged on a second portion of the graphene layer. A side part of the semiconductor layer extends to the semiconductor substrate. A surface of the substrate is formed with an insulating layer (102). The graphene layer is formed on the insulating layer. USE - Ultra-short channel transistor. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for an ultra-short channel transistor manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of an ultra-short channel transistor. Semiconductor substrate (101) Insulating layer (102) Graphene layer (103) Semiconductor layer (104) Source electrode (108)