▎ 摘　　要

NOVELTY - The transistor has a source electrode arranged on a first graphene film. A channel is arranged between the source electrode and a drain electrode. A second graphene element is provided with semiconductor properties of a material layer stack. A second graphene film is formed by a double-layer graphene and a gate, where the gate is arranged on a laminated element. The gate is electrically insulated from the laminated element. First and second graphene films are formed by same double-layer Graphene film. A gate insulating layer is formed on a trench with an oxide thickness of less than 2 nm. USE - FET for an electronic device (claimed). DETAILED DESCRIPTION - First and second graphene film is a double-layer Graphene film stacking. DESCRIPTION OF DRAWING(S) - The drawing shows a partial sectional view of a FET for electronic device.