• 专利标题:   Dual-waveband thin film photodetector comprises base sheet, first electrode layer, first tungsten diselenide layer, graphene layer, third electrode layer, second molybdenum disulfide layer and fourth electrode layer.
  • 专利号:   CN107026217-A, CN107026217-B
  • 发明人:   LIAO G, LIU Z, SHI T, SUN B, TAN X, TANG Z, WU Y
  • 专利权人:   UNIV HUAZHONG SCI TECHNOLOGY, UNIV HUAZHONG SCI TECHNOLOGY
  • 国际专利分类:   H01L031/028, H01L031/032, H01L031/109, H01L031/20
  • 专利详细信息:   CN107026217-A 08 Aug 2017 H01L-031/109 201762 Pages: 10 Chinese
  • 申请详细信息:   CN107026217-A CN10227924 10 Apr 2017
  • 优先权号:   CN10227924

▎ 摘  要

NOVELTY - Dual-waveband thin film photodetector comprises base sheet (1), first electrode layer (2), first tungsten diselenide layer (3), graphene layer (4), first molybdenum disulfide layer (5), second electrode layer (6), medium layer (7), second tungsten diselenide layer (8), third electrode layer (9), second molybdenum disulfide layer (10) and fourth electrode layer (11). The first electrode layer is connected with upper surface of base sheet. The first tungsten diselenide layer is connected with upper surface of base sheet and first electrode layer. USE - Dual-waveband thin film photodetector. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic diagram of dual-waveband thin film photodetector. Base sheet (1) First electrode layer (2) First tungsten diselenide layer (3) Graphene layer (4) First molybdenum disulfide layer (5) Second electrode layer (6) Medium layer (7) Second tungsten diselenide layer (8) Third electrode layer (9) Second molybdenum disulfide layer (10) Fourth electrode layer (11)