• 专利标题:   Back contact electrode for use in cadmium telluride film solar cell structure, has graphene film layer prepared on back of resistant layer, where thickness of graphene film layer is in specific microns to specific mm.
  • 专利号:   CN102074590-A, CN102074590-B
  • 发明人:   HUANG F, LI D, LIANG J, LIN T
  • 专利权人:   CHINESE ACAD SCI SHANGHAI CERAMICS INST
  • 国际专利分类:   H01L031/0224, H01L031/18
  • 专利详细信息:   CN102074590-A 25 May 2011 H01L-031/0224 201149 Chinese
  • 申请详细信息:   CN102074590-A CN10541026 11 Nov 2010
  • 优先权号:   CN10541026

▎ 摘  要

NOVELTY - The electrode has a graphene film layer prepared on back of a plugging-resistant layer. Thickness of the graphene film layer is 0.1 microns to 1 millimeter. Thickness of a glass substrate is 1-3 millimeters and the thickness of an upper conductive layer is 300 nanometers to 3 microns. Thickness of a window layer i.e. cadmium sulphide, is 20 nanometers to 300 microns. Thickness of a light absorption layer i.e. cadmium telluride, is 600 nanometers to 10 microns. A shielding layer is provided with zinc telluride/copper-doped zinc telluride compound layer. USE - Back contact electrode for use in a cadmium telluride (CdTe) film solar cell structure. ADVANTAGE - The electrode is inexpensive, and has high-performance, and ensures large-scale production of CdTe battery. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for preparing a back contact electrode. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a back contact electrode.'(Drawing includes non-English language text)'